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研究人才詳細資料


出版年月 著作類別 著作名稱 作者 收錄出處
2013-05 期刊論文 A Current Transport Mechanism of Metal-Semiconductor-Metal GaAs Diodes with Mixed Contacts of Pd and SiO2”, Advances in Materials Science and Engineering S. W. Tan and S. W. Lai, Advances in Materials Science and Engineering
2013-01 期刊論文 Sensing properties of resistive-type hydrogen sensors with a Pd-SiO2 thin-film mixture C. Lo, S. W. Tan, C. Y. Wei, J. H. Tsai and W. S. Lour International Journal of Hydrogen Energy
2012-12 期刊論文 Unidirectional sensing characteristics of structured Au–GaN–Pt diodes for differential-pair hydrogen sensors C. Lo, S. W. Tan, C. Y. Wei, J. H. Tsai, K. Y. Hsu and W. S. Lour International Journal of Hydrogen Energy
2012-11 期刊論文 Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode 譚仕煒 PLoS ONE
2012-07 期刊論文 Experimental characterization and modeling analysis on npn AlGaN/GaN HBT with high ideality factor in both collector and base current 譚仕煒 Surface Review and Letters
2012-02 期刊論文 Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment 譚仕煒 Advances in Materials Science and Engineering
2011-09 期刊論文 Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer S. W. Tan, J. H. Tsai, S. W. Lai, C. Lo, and W. S. Lour Internal Journal of Hydrogen Energy
2007-07 期刊論文 Self-Aligned Enhancement-Mode and Parasite Depletion-Mode Heterojunction Doped-Channel FET for Low Power Supply DCFL Application 譚仕煒* Journal of Electrochemical Society
2007-03 期刊論文 The Influence of Ambient Temperature on the Forward Bias Electrical Characteristics of p-n Heterojunction and Homojunction Interface 譚仕煒 Journal of Electrochemical Society
2005-08 期刊論文 Fringing effects of V-shape gate metal on GaAs/InGaP/InGaAs doped-channel field-effect transistors 譚仕煒 Semicond. Sci. & Technol.
2005-05 期刊論文 Three-terminal dual-emitter phototransistor with both voltage- and power-tunable optical gain 譚仕煒 Jpn. J. Appl. Phys. Pt.I
2005-04 期刊論文 Comparisons and modeling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modes 譚仕煒 Semicond. Sci. & Technol.
2005-03 期刊論文 Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface 譚仕煒 Superlattices and Microstructures
2005-02 期刊論文 Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation 譚仕煒 IEEE Trans. Electron Devices
2005-02 期刊論文 The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors 譚仕煒 J. Appl. Phys.
2004-09 期刊論文 Experiments and modeling of double-emitter HPTs with different emitter-area ratios for functional applications 譚仕煒 Semicond. Sci. & Technol.
2004-05 期刊論文 Performance enhancement of double-emitter HPTs with different emitter-area ratios 譚仕煒 Electronics Lett.
2003-12 期刊論文 Sub-0.25 micro gate like heterojunction doped-channel FETs with a controllable notch-angle V-gate 譚仕煒 Semicond. Sci. & Technol.
2003-11 期刊論文 Sub-0.5-um gate doped-channel FETs with HEMT-like channel using thermally re-flowed photo-resist and spin-on-glass 譚仕煒 Semicond. Sci. & Technol.
2003-08 期刊論文 An Investigation of direct-current characteristics of composite-emitter heterojunction bipolar transistors 譚仕煒 Jpn. J. Appl. Phys. Pt.I
2003-08 期刊論文 Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors 譚仕煒 Superlattices and Microstructures
2003-02 期刊論文 Improvements in direct-current characteristics of Al0.45Ga0.55As/GaAs digital-graded superlattice-emitter heterojunction bipolar transistors with reduced turn-on voltage by wet-oxidation 譚仕煒 IEEE Trans. Electron Devices
2002-05 期刊論文 Effects of wet-oxidation treatment on Al0.45Ga0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage 譚仕煒 Appl. Phys. Lett.
2002-04 期刊論文 Investigation of self-aligned p++-GaAs/n-InGaP hetero-junction field-effect transistors 譚仕煒 Physica E
2002-01 期刊論文 Depletion- and enhancement-mode InGaP/GaAs δ-HEMT’s for Low supply-voltage applications 譚仕煒 Semicond. Sci. & Technol.
2001-08 期刊論文 Dual-Gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing 譚仕煒 Semicond. Sci. Technol.